DocumentCode :
3518390
Title :
Light trapping for thin silicon solar cells by femtosecond laser texturing
Author :
Lee, Benjamin G. ; Lin, Yu-Ting ; Sher, Meng-Ju ; Mazur, Eric ; Branz, Howard M.
Author_Institution :
Nat. Renewable Energy Lab., Nat. Center for Photovoltaics, Golden, CO, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 μm thick [1-2]. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit [3].
Keywords :
silicon; solar cells; surface roughness; Yablonovitch limit; crystalline silicon solar cells; femtosecond laser texturing; indirect-gap semiconductor absorber layer; light trapping; micron-scale surface roughness; nanoscale surface roughness; near-infrared photons; optical absorption; single light-pass; Absorption; Epitaxial growth; Optical reflection; Photovoltaic cells; Silicon; Surface emitting lasers; Ultrafast optics; Lambertian; epitaxial silicon; femtosecond laser; laser texturing; light trapping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317902
Filename :
6317902
Link To Document :
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