DocumentCode :
3518403
Title :
Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory
Author :
Souchier, E. ; Vaju, C. ; Guiot, V. ; Corraze, B. ; Janod, E. ; Tranchant, J. ; Mazoyer, P. ; Besland, M.-P. ; Cario, L.
Author_Institution :
Inst. des Mater. Jean Rouxel (IMN), Univ. de Nantes, Nantes, France
fYear :
2011
fDate :
22-25 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
We report here on a new type of non volatile resistive switching that we discovered in the whole class of Mott Insulator compounds AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). The mechanism of this resistive switching differs from the thermochemical or electrochemical effects reported so far to explain the resistive switching in other materials. We found that this resistive switching is related to an electric field effect which induces an electronic phase change in the AM4X8 compounds from the Mott insulating state to a metallic-like state. This new type of resistive switching is observed both on crystals and on polycrystalline thin films with fast writing/erasing times (50 ns to 10 μs) and resistance ratios (ΔR/Rlow) higher than 33% at room temperature. These results appear very promising at developing a new class of Resistive Random Access Memory (RRAM).
Keywords :
gallium compounds; germanium compounds; localised states; niobium compounds; random-access storage; tantalum compounds; vanadium compounds; GaNb4Se8; GaTa4Se8; GaV4S8; GaV4Se8; GeV4S8; Mott insulator; electric field; electrochemical effects; electronic phase change; metallic-like state; nonvolatile RRAM memory; polycrystalline thin film; resistive random access memory; resistive switching drive; temperature 293 K to 298 K; thermochemical effects; Compounds; Crystals; Insulators; Nonvolatile memory; Resistance; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
Type :
conf
DOI :
10.1109/IMW.2011.5873220
Filename :
5873220
Link To Document :
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