A generalised methodology for oxide leakage current metric

From calculations of semiconductor interface charge, oxide voltage and tunneling currents for MOS systems with equivalent oxide thickness (EOT) in the range of 1 nm, rules are suggested for making it possible to compare leakage quality of different oxides with an accuracy of a factor 2 - 3 if the EOT is known. The standard procedure suggested gives considerably better accuracy than the commonly used method to determine leakage at VFB+YV for n-type and VFB-YV for p-type substrates.