• DocumentCode
    3518435
  • Title

    A High Performance and Low Power Logic CMOS Compatible Embedded 1Mb CBRAM Non-Volatile Macro

  • Author

    Hollmer, Shane ; Gilbert, Nad ; Dinh, John ; Lewis, Derric ; Derhacobian, Narbeh

  • Author_Institution
    Adesto Technol. Inc., Sunnyvale, CA, USA
  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes the implementation of a low power and high performance embedded non-volatile memory macro utilizing conductive bridging random access memory (CBRAM) in a standard logic CMOS 130nm Process. A 1MBit embedded non-volatile memory (NVM) macro is presented that reduces write power per bit by more than one order of magnitude over state of art flash to less than 5pJ, while write performance is improved from ms range to less than 250ns and read random access time of less than 20ns is demonstrated. Detail building blocks are descried and low energy write operation is demonstrated.
  • Keywords
    CMOS logic circuits; low-power electronics; random-access storage; CBRAM; conductive bridging random access memory; low energy write operation; low power logic CMOS; nonvolatile memory macro; size 130 nm; Anodes; Computer architecture; Logic gates; Microprocessors; Nonvolatile memory; Resistance; Sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873221
  • Filename
    5873221