DocumentCode
3518435
Title
A High Performance and Low Power Logic CMOS Compatible Embedded 1Mb CBRAM Non-Volatile Macro
Author
Hollmer, Shane ; Gilbert, Nad ; Dinh, John ; Lewis, Derric ; Derhacobian, Narbeh
Author_Institution
Adesto Technol. Inc., Sunnyvale, CA, USA
fYear
2011
fDate
22-25 May 2011
Firstpage
1
Lastpage
4
Abstract
This paper describes the implementation of a low power and high performance embedded non-volatile memory macro utilizing conductive bridging random access memory (CBRAM) in a standard logic CMOS 130nm Process. A 1MBit embedded non-volatile memory (NVM) macro is presented that reduces write power per bit by more than one order of magnitude over state of art flash to less than 5pJ, while write performance is improved from ms range to less than 250ns and read random access time of less than 20ns is demonstrated. Detail building blocks are descried and low energy write operation is demonstrated.
Keywords
CMOS logic circuits; low-power electronics; random-access storage; CBRAM; conductive bridging random access memory; low energy write operation; low power logic CMOS; nonvolatile memory macro; size 130 nm; Anodes; Computer architecture; Logic gates; Microprocessors; Nonvolatile memory; Resistance; Sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4577-0225-9
Electronic_ISBN
978-1-4577-0224-2
Type
conf
DOI
10.1109/IMW.2011.5873221
Filename
5873221
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