A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

Author

Pan, Feng ; Yin, Shong ; Subramanian, Vivek

Author_Institution

Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA

fYear

2011

fDate

22-25 May 2011

Firstpage

1

Lastpage

4

Abstract

The conducting metal filament formation process of a typical resistive switching memory is comprehensively studied using Kinetic Monte Carlo simulation, which includes multiple physical and chemical mechanisms. The characteristics of the forming voltage, forming time and the so called "Voltage-time dilemma" are investigated. In addition filament topographies, which strongly influence device properties, are studied under different device operation conditions. Simulated I-V characteristics are determined and illustrated. Further, studies on filament overgrowth and on-state resistance are presented. Finally, the influence of the size of the device on the forming voltage is simulated.

Keywords

Monte Carlo methods; random-access storage; I-V characteristics; RRAM devices; comprehensive simulation study; kinetic Monte Carlo simulation; metal conducting filament formation; resistive switching memories; voltage-time dilemma; Cathodes; Copper; Kinetic theory; Mathematical model; Resistance; Surfaces; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2011 3rd IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4577-0225-9

Electronic_ISBN

978-1-4577-0224-2

Type

conf

DOI

10.1109/IMW.2011.5873222

Filename

5873222