Title :
HERA-B detectors with p-spray isolation on the N-side; unirradiated results
Author :
Schjølberg-Henriksen, Kari ; Westgaard, Trond ; Sundby Avset, B.
Author_Institution :
Dept. of Electron. & Cybernetics, SINTEF, Oslo, Norway
Abstract :
P-spray isolation of double-sided detectors is investigated by computer simulations and measurements on full-size detector prototypes. Simulations showed that boron p-spray implant doses 4.1012, 6.1012, and 8.1012 cm-2 and implant energy 60 keV would yield breakdown voltages above 200 V for unirradiated detectors with oxide charge 2.1011 cm-2 . The simulations showed that the breakdown voltage decreases with increasing p-spray dose. According to the computer simulations, the detectors should perform equally well after irradiation giving an oxide charge of 1.1012 cm-2. HERA-B strip detectors with p-spray isolation were manufactured, using the three simulated doses. The average breakdown voltages and standard deviations were 167±31 V for the 4.1012 cm-2 dose, 151±16 V for the 6.1012 cm-2 dose, and 127±13 V for the 8.1012 cm-2 dose. The measured decrease in breakdown voltage is in good agreement with the computer simulations
Keywords :
silicon radiation detectors; HERA-B detectors; Si; boron p-spray implant doses; breakdown voltage; breakdown voltages; double-sided detectors; oxide charge; p-spray isolation; unirradiated results; Avalanche breakdown; Breakdown voltage; Computational modeling; Computer simulation; Detectors; Implants; Silicon; Spraying; Strips; Virtual prototyping;
Conference_Titel :
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-5696-9
DOI :
10.1109/NSSMIC.1999.842499