Performance trade-offs of argon implanted SOI MOSFETs with In and Sb retrograde channel doping

Author

Xu, X.-L. ; Widenhofer, R. ; Yu, Y. ; Zia, O. ; Pozder, S. ; Hall, D. ; Rashed, M. ; Chang, D. ; Jallepalli, S. ; Connelly, D. ; Van Gompel, T. ; Olivares, M. ; Mendicino, M. ; Candelaria, J. ; Veeraraghavan, S. ; Dow, D.

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

90

Lastpage

91

Abstract

We report high performance device characteristics of 0.18 /spl mu/m SOI CMOS technology with indium (In) and antimony (Sb) retrograde channel doping and argon (Ar) implant. Experimental results demonstrate significant suppression of floating body (FB) effects, reduced off-state current, improved I/sub on/-I/sub off/ characteristics, and reduced drain induced barrier lowering (DIBL) values for the Ar implanted SOI devices. At the same time, the presence of Ar leads to increased subthreshold swing (SS), degraded GIDL characteristics, and increased electrical gate oxide thickness. Experimental results also show that the Ar implant for suppression of FB effects in PD SOI NMOS devices is less significant as the device gate channel length reduces to 0.15 /spl mu/m and below.

Keywords

CMOS integrated circuits; MOSFET; antimony; argon; dielectric thin films; doping profiles; electric current; indium; ion implantation; silicon-on-insulator; 0.15 micron; 0.18 micron; Ar implant; Ar implanted SOI devices; FB effects; In retrograde channel doping; PD SOI NMOS devices; SOI CMOS technology; Sb retrograde channel doping; Si:Ar,In,Sb-SiO/sub 2/; argon implanted SOI MOSFETs; degraded GIDL characteristics; device characteristics; device gate channel lengt; drain induced barrier lowering; electrical gate oxide thickness; floating body effects; off-state current; on-off current characteristics; performance trade-offs; subthreshold swing; Argon; CMOS technology; Degradation; Doping; Implants; Indium; Lead compounds; Leakage current; MOS devices; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819867

Filename

819867