Title :
Ultimately thin SOI MOSFETs: special characteristics and mechanisms
Author :
Ernst, T. ; Munteanu, D. ; Cristoloveanu, S. ; Ouisse, T. ; Hefyene, N. ; Horiguchi, S. ; Ono, Y. ; Takahashi, Y. ; Murase, K.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
The fabrication of very thin Si films is an absolute priority for successfully scaling down the channel length of SOI MOSFETs below 50-100nm. While "ultra-thin" is a generic terminology for Si films 30-50 nm thick, the focus of this paper is on much thinner films, in the terminal range of 1-5 nm. N-channel MOSFETs, fabricated at NTT (Japan) on low-dose SIMOX substrates (62 nm thick buried oxide) have elevated, thicker source and drain, natural (residual) body doping, thick gate oxide (50 nm) and long channel (30 /spl mu/m to attenuate the parasitic influence of series resistances and device topology). The transistor body has been thinned by sacrificial oxidation.
Keywords :
MOSFET; SIMOX; dielectric thin films; doping profiles; nanotechnology; oxidation; semiconductor thin films; 1 to 5 nm; 30 micron; 30 to 50 nm; 50 to 100 nm; 62 nm; N-channel MOSFETs; SOI MOSFETs; Si film thickness; Si films; Si-SiO/sub 2/; buried oxide; channel length scaling; downscaling; drain thickness; gate oxide; low-dose SIMOX substrates; natural residual body doping; parasitic device topology effects; parasitic series resistance effects; sacrificial oxidation; source thickness; terminal thickness range; transistor body thinning; ultimately thin SOI MOSFETs; very thin Si films; Doping; Fabrication; Laboratories; MOSFETs; Semiconductor films; Silicon on insulator technology; Substrates; Terminology; Topology; Transconductance;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819868
