• DocumentCode
    3518488
  • Title

    A12O3 optimization for Charge Trap memory application

  • Author

    Scozzari, C. ; Albini, G. ; Alessandri, M. ; Amoroso, S. ; Bacciaglia, P. ; Del Vitto, A. ; Ghidini, Giacomo

  • Author_Institution
    STMicroelectronics, Agrate Brianza
  • fYear
    2008
  • fDate
    12-14 March 2008
  • Firstpage
    191
  • Lastpage
    194
  • Abstract
    Aim of this work is the study the crystallization treatment of Alumina used as blocking oxide in Charge Trap memories. We have found that thermal treatment before gate deposition is able to crystallize Alumina giving better erase and write efficiency than any treatment after gate deposition, without degradation of the memory stack.
  • Keywords
    alumina; coating techniques; crystallisation; flash memories; heat treatment; Al2O3; alumina; blocking oxide; charge trap memory application; crystallization treatment; gate deposition; memory stack; thermal treatment; Aluminum oxide; Annealing; Capacitance-voltage characteristics; Capacitors; Crystallization; Current measurement; Dielectric measurements; Interface states; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
  • Conference_Location
    Udine
  • Print_ISBN
    978-1-4244-1729-2
  • Electronic_ISBN
    978-1-4244-1730-8
  • Type

    conf

  • DOI
    10.1109/ULIS.2008.4527171
  • Filename
    4527171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518488