DocumentCode
351849
Title
Charge loss in the channel stop regions of the X-ray CCD
Author
Prigozhin, G. ; Pivovaroff, M. ; Kissel, S. ; Bautz, M. ; Ricker, G.
Author_Institution
Center for Space Res., MIT, Cambridge, MA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
327
Abstract
We have investigated a response function of high resistivity X-ray CCD detectors used for imaging and spectroscopy in 0.2-10 keV energy band. Channel stop regions occupy a noticeable fraction of the device pixel and can seriously distort the shape of the response, especially for the so-called horizontally split events which produce charge in two adjacent pixels. We found that charge clouds formed inside the doped p+ region of the channel stop can suffer a serious charge loss. To investigate the details of the charge loss distribution inside the pixel the “mesh technique” was used. We have discovered that charge loss is entirely suppressed under one of the 3 gates comprising the pixel. Voltage and temperature dependences of the losses were examined, and were shown to have a dramatic effect on the mechanism of the loss and the shape of the response function. The discovery of the supression of charge loss at low voltages can have a significant effect on the design of backside illuminated devices
Keywords
CCD image sensors; X-ray detection; silicon radiation detectors; Si; X-ray CCD; backside illuminated devices; channel stop regions; charge clouds; charge loss; doped p+ region; mesh technique; response function; Charge coupled devices; Clouds; Conductivity; Optical imaging; Shape; Spectroscopy; Voltage; X-ray detection; X-ray detectors; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location
Seattle, WA
ISSN
1082-3654
Print_ISBN
0-7803-5696-9
Type
conf
DOI
10.1109/NSSMIC.1999.842502
Filename
842502
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