• DocumentCode
    351849
  • Title

    Charge loss in the channel stop regions of the X-ray CCD

  • Author

    Prigozhin, G. ; Pivovaroff, M. ; Kissel, S. ; Bautz, M. ; Ricker, G.

  • Author_Institution
    Center for Space Res., MIT, Cambridge, MA, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    327
  • Abstract
    We have investigated a response function of high resistivity X-ray CCD detectors used for imaging and spectroscopy in 0.2-10 keV energy band. Channel stop regions occupy a noticeable fraction of the device pixel and can seriously distort the shape of the response, especially for the so-called horizontally split events which produce charge in two adjacent pixels. We found that charge clouds formed inside the doped p+ region of the channel stop can suffer a serious charge loss. To investigate the details of the charge loss distribution inside the pixel the “mesh technique” was used. We have discovered that charge loss is entirely suppressed under one of the 3 gates comprising the pixel. Voltage and temperature dependences of the losses were examined, and were shown to have a dramatic effect on the mechanism of the loss and the shape of the response function. The discovery of the supression of charge loss at low voltages can have a significant effect on the design of backside illuminated devices
  • Keywords
    CCD image sensors; X-ray detection; silicon radiation detectors; Si; X-ray CCD; backside illuminated devices; channel stop regions; charge clouds; charge loss; doped p+ region; mesh technique; response function; Charge coupled devices; Clouds; Conductivity; Optical imaging; Shape; Spectroscopy; Voltage; X-ray detection; X-ray detectors; X-ray imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-5696-9
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1999.842502
  • Filename
    842502