Title :
Temperature compensated integrated Zener diode with wide range of the operating currents and low temperature coeffcient
Author :
Primak, Mikhail A. ; Shestakov, Ivan S. ; Makukha, Vladimir K.
Author_Institution :
JS Novosibirsk Plant of Semicond. Devices with Design Bur., Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
The process of simulation and implementation of the high-accuracy device by using standard CMOS technology is considered in the paper. The selection of the process flow and changes of the standard circuit design are described. Simulation results and measurements of created devices are presented.
Keywords :
CMOS integrated circuits; Zener diodes; compensation; integrated circuit design; high-accuracy device; low temperature coefficient; operating currents; process flow; standard CMOS technology; standard circuit design; temperature compensated integrated Zener diode; Integrated circuit modeling; Junctions; Resistance; Semiconductor device modeling; Semiconductor diodes; Simulation; Solid modeling; TCIZD manufacturing technology; construction; temperature compensated integrated Zener diode (TCIZD);
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184489
