Title :
A RF power LDMOS device on SOI
Author :
Fiorenza, J.G. ; Del Alamo, J.A. ; Antoniadis, D.A.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
We have fabricated a partially-depleted SOI laterally diffused MOSFET (LDMOSFET) that is designed for use in radio frequency (RF) power amplifiers (PA) for portable applications. The device is fabricated on thin film SIMOX wafers and is suitable for integration with SOI CMOS. A high breakdown voltage is attained using a simple body contact scheme and the RF performance is exceptional.
Keywords :
CMOS integrated circuits; SIMOX; electrical contacts; microwave field effect transistors; microwave power amplifiers; power MOSFET; semiconductor device breakdown; semiconductor device reliability; LDMOSFET; RF performance; RF power LDMOS device; SOI; SOI CMOS integration; Si-SiO/sub 2/; body contact scheme; breakdown voltage; partially-depleted SOI laterally diffused MOSFET; portable applications; radio frequency power amplifiers; thin film SIMOX wafers; CMOS technology; Contact resistance; Fabrication; Immune system; Implants; Isolation technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transconductance;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819870
