Title :
Effects of RRAM Stack Configuration on Forming Voltage and Current Overshoot
Author :
Gilmer, D.C. ; Bersuker, G. ; Park, H.-Y. ; Park, C. ; Butcher, B. ; Wang, W. ; Kirsch, P.D. ; Jammy, R.
Abstract :
The impact of the forming operation current overshoot on subsequent reset current and cycling is investigated for Metal-Oxide-based RRAM through varying of metal-oxide thickness, composition, and dielectric configuration. Reducing forming voltage by means of RRAM metal-oxide stack engineering is found to lead to minimal forming current overshoot, which results in low reset currents. In addition, RRAM metal-oxide stacks can be engineered to either require a forming step, or to have similar characteristics without applying a forming step.
Keywords :
MIM devices; random-access storage; RRAM metal-oxide stack engineering; current overshoot; dielectric configuration; forming voltage overshoot; metal-oxide-based RRAM; Aluminum oxide; Dielectrics; Films; Monitoring; Oscilloscopes; Resistance; Switches;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873225
