Low energy X-ray spectroscopy with on-chip detector in 0.8 μm CMOS technology

Author

Kapnistis, C. ; Misiakos, K. ; Haralabidis, N. ; Karydas, A.G.

Author_Institution

Inst. of Microelectron., NCSR DEMOKRITOS, Athens, Greece

Volume

1

fYear

1999

fDate

1999

Firstpage

360

Abstract

A charge sensitive readout chain has been designed for pixel applications with small die area and low power dissipation. The tests in an X-ray environment have been performed with a detector integrated on the same substrate with the electronics. It consists of a 20 μm×20 μm diode, which is DC coupled to the input of the readout chain. The system has been designed and fabricated in a 0.8 μm commercially available CMOS technology. The overall gain is 555 mV/fC; the ENC is 15.3 e rms; the power dissipation is 1.5 mW @ 3.3 V and 30 pF load capacitance; the active die area is 270 μm×270 μm. Spectra of X-ray sources with energies from 2.3 keV to 6.8 keV are reported and the noise characteristics of the system have been evaluated

Keywords

CMOS analogue integrated circuits; X-ray detection; X-ray spectrometers; silicon radiation detectors; 2.3 to 6.8 keV; CMOS technology; Si; X-ray sources; active die area; charge sensitive readout chain; commercially available CMOS technology; low energy X-ray spectroscopy; noise characteristics; on-chip detector; pixel applications; power dissipation; readout chain; CMOS technology; Capacitance; Diodes; Electronic equipment testing; Power dissipation; Spectroscopy; Switches; X-ray detection; X-ray detectors; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE

Conference_Location

Seattle, WA

ISSN

1082-3654

Print_ISBN

0-7803-5696-9

Type

conf

DOI

10.1109/NSSMIC.1999.842509

Filename

842509