Title :
Electron transport in Ta nanolayers: Application to tantalum capacitors
Author_Institution :
Doctoral Degree Programme (1), FEEC BUT, Czech Republic
Abstract :
Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these de-vices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4×10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers´ transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or be-come dominant for electric field higher than 2 MV/cm at temperature lower then 200 K.
Keywords :
dielectric properties; electrolytic capacitors; leakage currents; tantalum; thin films; MOSFET; Pool-Frenkel current component mechanism; RF MEMS switches; Ta; Ta nanolayers; charge carrier transport mechanism; current component tunneling; dielectric layers; dielectric property; electric field; electrical property; electron transport; gate insulating layers; ohmic conduction; tantalum capacitors; tantalum pent oxide thin films; Capacitors; Charge carriers; Electric fields; Leakage current; Permittivity; Temperature distribution; Tunneling;
Conference_Titel :
Electronics Technology (ISSE), 2010 33rd International Spring Seminar on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7849-1
Electronic_ISBN :
978-1-4244-7850-7
DOI :
10.1109/ISSE.2010.5547294
