Title :
Demonstration of CAM and TCAM Using Phase Change Devices
Author :
Rajendran, Bipin ; Cheek, Roger W. ; Lastras, Luis A. ; Franceschini, Michele M. ; Breitwisch, Matthew J. ; Schrott, Alejandro G. ; Li, Jing ; Montoye, Robert K. ; Chang, Leland ; Lam, Chung
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >;5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.
Keywords :
Monte Carlo methods; content-addressable storage; phase change memories; Monte-Carlo simulation; PCM decives; SRAM; TCAM; content addressable memory; phase change devices; phase change memory technology; ternary CAM; Arrays; Computer aided manufacturing; FETs; Phase change materials; Programming; Resistance; Resistors;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873229
