• DocumentCode
    3518597
  • Title

    Demonstration of CAM and TCAM Using Phase Change Devices

  • Author

    Rajendran, Bipin ; Cheek, Roger W. ; Lastras, Luis A. ; Franceschini, Michele M. ; Breitwisch, Matthew J. ; Schrott, Alejandro G. ; Li, Jing ; Montoye, Robert K. ; Chang, Leland ; Lam, Chung

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >;5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.
  • Keywords
    Monte Carlo methods; content-addressable storage; phase change memories; Monte-Carlo simulation; PCM decives; SRAM; TCAM; content addressable memory; phase change devices; phase change memory technology; ternary CAM; Arrays; Computer aided manufacturing; FETs; Phase change materials; Programming; Resistance; Resistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873229
  • Filename
    5873229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518597