DocumentCode :
3518609
Title :
A study of 3D boss structure formation in anisotropic etching of Si (100) in aqueous KOH
Author :
Chernov, Artyom S. ; Chebanov, Mikhail A. ; Gridchin, Viktor A. ; Vasilyev, Vladislav Yu ; Byalik, Alexander D.
Author_Institution :
RAMIT LLC, Novosibirsk, Russia
fYear :
2015
fDate :
June 29 2015-July 3 2015
Firstpage :
83
Lastpage :
86
Abstract :
The results of experimental investigation of formation features of the 3D boss with embedded V-groove for the optic fber, comprised in optomechanical part of MOEMS photovoltaic pressure sensor are presented. Dependences of ratio change of length of edges <;110> and <;410> forming underetching compensators of convex corners of the chip have been obtained. To provide good quality of the boss etch, the value of misalignment angle between the mask and silicon wafer primary fat has been defned to be less than 0.5 degrees.
Keywords :
compensation; elemental semiconductors; etching; fibre optic sensors; micro-optomechanical devices; microsensors; photodetectors; pressure sensors; silicon; 3D boss structure formation; MOEMS photovoltaic pressure sensor; Si; V-groove; anisotropic etching; micro-optical-electromechanical silicon-based sensor; misalignment angle; optic fiber; silicon wafer mask; underetching compensator; Etching; Optical fiber sensors; Optical fibers; Shape; Silicon; V-groove; anisotropic etching in KOH; boss structure; compensation structures; optical fber; silicon photoelectrical pressure sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
ISSN :
2325-4173
Print_ISBN :
978-1-4673-6718-9
Type :
conf
DOI :
10.1109/EDM.2015.7184494
Filename :
7184494
Link To Document :
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