• DocumentCode
    351864
  • Title

    The DEPFET pixel BIOSCOPE

  • Author

    Neeser, W. ; Böcker, M. ; Buchholz, P. ; Fischer, P. ; Holl, P. ; Kemmer, J. ; Klein, P. ; Koch, H. ; Löcker, M. ; Lutz, G. ; Matthäy, H. ; Strüder, L. ; Trimpl, M. ; Ulrici, J. ; Wermes, N.

  • Author_Institution
    Phys. Inst., Bonn Univ., Germany
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    443
  • Abstract
    The DEPFET pixel Bioscope system based on a DEPFET pixel matrix provides good spatial and energy resolution in real-time digital autoradiography. Due to its very low noise and an optimized entrance window the online detection of tritium without vacuum or cooling is demonstrated for the first time. To achieve this milestone a p-channel junction field effect transistor on a fully depleted high ohmic silicon substrate (DEPFET) is used as unit cell for pixel detectors providing an excellent noise performance of 158 eV FWHM at 6 keV (12 e ENC) at room temperature (300 K). 64×64 DEPFET pixel matrices with square (50 μm×50 μm) or hexagonal (50 μm×42 μm) pixels have been developed and operated successfully. First measurements result in a homogeneous charge collection efficiency on the whole matrix area and a good linearity in the X-ray range from 5 keV to 60 keV. First images taken with the square and the hexagonal pixel matrices using an 55 Fe-source as well as a “proof of principle” experiment for online 3H-detection are presented and discussed
  • Keywords
    biological techniques; field effect transistors; image resolution; radioisotope imaging; 158 keV; 300 K; 50 mum; 6 keV; 55Fe-source; DEPFET pixel BIOSCOPE; DEPFET pixel matrix; Fe; H; Si; energy resolution; fully depleted high ohmic silicon substrate; homogeneous charge collection efficiency; noise performance; online 3H-detection; p-channel junction field effect transistor; real-time digital autoradiography; spatial resolution; Area measurement; Charge measurement; Cooling; Current measurement; Detectors; Energy resolution; FETs; Real time systems; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-5696-9
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1999.842524
  • Filename
    842524