Title :
Modeling of elastic energy relaxation in coaxial InAs-GaAs nanowire heterostructures
Author :
Karpov, Alexander N. ; Shwartz, Nataliya L.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
Modeling results of elastic strain distribution in InAs/GaAs core-shell nanowires are presented. Calculations were carried out using molecular static technique. The critical core radius and critical shell thickness of coherent radial heterostructures were estimated. Critical core radius was demonstrated to be 1 nm.
Keywords :
III-V semiconductors; core-shell nanostructures; elasticity; gallium arsenide; indium compounds; nanowires; InAs-GaAs; coaxial nanowire heterostructures; coherent radial heterostructures; core-shell nanowires; critical core radius; critical shell thickness; elastic energy relaxation; elastic strain distribution; molecular static technique; Atomic measurements; Compressive stress; Gallium arsenide; Nanoscale devices; Strain; Tensile stress; GaAs; InAs; dislocation; heterostructures; modeling; nanowires;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184497
