Title :
Electrical Performances of Tellurium-Rich GexTe1-x Phase Change Memories
Author :
Navarro, G. ; Pashkov, N. ; Suri, M. ; Sousa, V. ; Perniola, L. ; Maitrejean, S. ; Persico, A. ; Roule, A. ; Toffoli, A. ; De Salvo, B. ; Zuliani, P. ; Annunziata, R.
Author_Institution :
CEA-LETI, MINATEC, Grenoble, France
Abstract :
This paper investigates the electrical performance of Tellurium-rich GexTe1-x (with x = 0.3, 0.4, 0.5) Phase Change Memory (PCM) devices. Analysis performed on lance-type PCM cells showed an increase in threshold voltage and crystallization temperature as the Te content is increased. Furthermore, the current required to program the memory in the high resistive state decreased. The improved stability of amorphous phase in Te-rich materials gives rise to higher data retention in our devices.
Keywords :
germanium compounds; phase change memories; GexTe1-x; amorphous phase; crystallization temperature; data retention; electrical performance; lance-type PCM cells; phase change memory devices; threshold voltage; Conductivity; Crystallization; Performance evaluation; Phase change materials; Resistance; Temperature measurement;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873232
