Title :
A study on the characterization of quasi-three-dimensional PN junction capacitor
Author :
Wang, Huijuan ; Lv, Yao ; Gao, Wei ; Wan, Lixi
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
This paper discusses a novel quasi-three-dimensional PN Junction capacitor, which has a high density of capacitance (200nF/cm2) with a relatively high working frequency (3GHz). These properties are because of its unique trench structure. To identify the performance of this kind of capacitor, some tests were carried out at both low frequency and high frequency. Moreover, a typical power supply filter network was designed to compare the embedded capacitor with a commercial 2nF SMD 0402 capacitor.
Keywords :
capacitors; p-n junctions; SMD 0402 capacitor; frequency 3 GHz; high frequency; high working frequency; low frequency; quasi-3D PN junction capacitor; Capacitance; Capacitors; Dielectric substrates; Electronics packaging; Frequency; Semiconductor device doping; Silicon; Surface resistance; Testing; Voltage;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4658-2
Electronic_ISBN :
978-1-4244-4659-9
DOI :
10.1109/ICEPT.2009.5270561
