Title :
The effects of preparation conditions of SIMOX samples on the photoluminescence spectra of their buried oxide layer
Author :
Skorupa, W. ; Rebohle, L. ; Revesz, A.G. ; Hughes, H.L.
Author_Institution :
Forschungszentrum Rossendorf, Dresden, Germany
Abstract :
The purpose of this work was to study the effects of oxygen implant conditions and post-implant processes on the photoluminescence (PL) behavior of the BOX layer of SIMOX structures. The effect of heat treatment of pseudo-SIMOX structures (top Si layer removed) is also reported; this point is relevant to the defect structure of BOX layers. An important aspect of this work is that the samples used in this work have been extensively studied by various electrical and other techniques so that the PL spectra could be correlated with the results of those studies.
Keywords :
SIMOX; buried layers; crystal defects; dielectric thin films; heat treatment; integrated circuit technology; ion implantation; photoluminescence; BOX layer; BOX layers; PL spectra; SIMOX samples; SIMOX structures; Si-SiO/sub 2/; buried oxide layer; defect structure; heat treatment; oxygen implant conditions; photoluminescence; photoluminescence spectra; post-implant processes; preparation conditions; pseudo-SIMOX structures; top Si layer; Amorphous silicon; Argon; Crystallization; Electrons; Heat treatment; Implants; Laboratories; Photoluminescence; Semiconductor films; Wavelength measurement;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819885
