Title :
Connection of aluminum and boron nitride ceramic building with conduction
Author :
Lopatin, V.V. ; Kabyshev, A.V.
Author_Institution :
High Voltage Inst., Tomsk, USSR
Abstract :
The relationship between macrodefects and conduction in BN and AlN ceramics was investigated using optical and electron microscopy and X-ray analysis. Ceramic-sintering-assisted additives in the form of new impurity phases are found to exist at the aggregate interfaces only as crystalline and amorphous inclusions. Expressions that qualitatively describe the measurement results on boron nitride of different structures in the temperature range from 300 to 1800 K are obtained
Keywords :
aluminium compounds; boron compounds; ceramics; crystal inclusions; electrical conductivity of crystalline semiconductors and insulators; powder technology; sintering; 300 to 1800 K; AlN; BN; X-ray analysis; aggregate interfaces; amorphous inclusions; ceramic sintering assisted additives; crystalline inclusions; electron microscopy; macrodefects; optical microscopy observations; Aggregates; Aluminum; Amorphous materials; Boron; Ceramics; Crystallization; Electron microscopy; Electron optics; Impurities; Optical microscopy;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location :
Trondheim
DOI :
10.1109/ICSD.1989.69177
