DocumentCode
3518788
Title
Connection of aluminum and boron nitride ceramic building with conduction
Author
Lopatin, V.V. ; Kabyshev, A.V.
Author_Institution
High Voltage Inst., Tomsk, USSR
fYear
1989
fDate
3-6 Jul 1989
Firstpage
143
Lastpage
147
Abstract
The relationship between macrodefects and conduction in BN and AlN ceramics was investigated using optical and electron microscopy and X-ray analysis. Ceramic-sintering-assisted additives in the form of new impurity phases are found to exist at the aggregate interfaces only as crystalline and amorphous inclusions. Expressions that qualitatively describe the measurement results on boron nitride of different structures in the temperature range from 300 to 1800 K are obtained
Keywords
aluminium compounds; boron compounds; ceramics; crystal inclusions; electrical conductivity of crystalline semiconductors and insulators; powder technology; sintering; 300 to 1800 K; AlN; BN; X-ray analysis; aggregate interfaces; amorphous inclusions; ceramic sintering assisted additives; crystalline inclusions; electron microscopy; macrodefects; optical microscopy observations; Aggregates; Aluminum; Amorphous materials; Boron; Ceramics; Crystallization; Electron microscopy; Electron optics; Impurities; Optical microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location
Trondheim
Type
conf
DOI
10.1109/ICSD.1989.69177
Filename
69177
Link To Document