Title :
Power amplifiers on thin-film-silicon-on-insulator (TFSOI) technology
Author :
Ngo, D. ; Huang, W.M. ; Ford, J.M. ; Spooner, D.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
Abstract :
Portable wireless communication applications have provided a relentless driving force for semiconductor manufacturers to deliver high performance circuits operating with drastically reduced supply voltage and power. To ultimately enable a single chip solution, process technology for these circuits must support all functions within the radio, from digital microcontrollers to RF downconversion. The literature reflects previous work that soundly demonstrates the advantages of thin-film-silicon-on-insulator (TFSOI) in low power digital baseband circuits such as microcontroller CPUs, SRAM, DRAM and ALUs (Huang et al. 1997). More recently, results of receiver functions such as low noise amplifiers, mixers, and VCOs implemented in TFSOI have been reported (Harada et al. 1997; Dekker et al. 1997; Tseng et al. 1998). Lack of a successful demonstration of a power amplifier has been one element preventing implementation of a complete TFSOI RF transceiver. This paper reports the results of the first demonstration of power amplifiers on TFSOI, using n-channel RF MOSFET devices.
Keywords :
UHF field effect transistors; UHF power amplifiers; mobile radio; power MOSFET; silicon-on-insulator; transceivers; ALUs; DRAM; RF downconversion; SRAM; Si-SiO/sub 2/; TFSOI; TFSOI RF transceiver; TFSOI technology; VCOs; digital microcontrollers; low noise amplifiers; low power digital baseband circuits; microcontroller CPUs; mixers; n-channel RF MOSFET devices; portable wireless communication applications; power amplifiers; process technology; receiver functions; semiconductor manufacture; single chip solution; supply power; supply voltage; thin-film-silicon-on-insulator technology; Circuits; Microcontrollers; Power amplifiers; Power supplies; Radio frequency; Radiofrequency amplifiers; Random access memory; Semiconductor device manufacture; Voltage; Wireless communication;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819888