Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7

Author

Chuang, Alfred Tung Hua ; Chen, Yi-Chou ; Chu, Yung-Ching ; Chang, Po-Chin ; Kao, Kin-Fu ; Chang, Chih-Chung ; Hsieh, Kuang-Yeu ; Chin, Tsung-Shune ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2011

fDate

22-25 May 2011

Firstpage

1

Lastpage

3

Abstract

GaTeSb materials possess excellent phase change properties comparable to conventional GeSbTe-based PCM systems. GaTeSb-based quaternary systems are engineered and evaluated as thin film methodologically using x-ray diffraction, isothermal and non-isothermal calculation of activation energies, differential thermal analysis, followed by device characterization on electrical performances, endurance and retention. Quaternary GaTeSb-based systems are proven to be temperature-robust with fast switching characteristics.

Keywords

X-ray diffraction; differential thermal analysis; gallium compounds; phase change memories; tellurium compounds; Ga₂TeSb₇; PCM system; X-ray diffraction; activation energy; differential thermal analysis; isothermal calculation; non-isothermal calculation; quaternary material system; temperature robust phase change memory; thin film methodologically; Crystallization; Logic gates; Phase change materials; Resistance; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2011 3rd IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4577-0225-9

Electronic_ISBN

978-1-4577-0224-2

Type

conf

DOI

10.1109/IMW.2011.5873240

Filename

5873240