DocumentCode :
3518841
Title :
1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor
Author :
Matsuzaki, Takanori ; Inoue, Hiroki ; Nagatsuka, Shuhei ; Okazaki, Yutaka ; Sasaki, Toshinari ; Noda, Kousei ; Sekine, Yusuke ; Matsubayashi, Daisuke ; Ishizu, Takahiko ; Onuki, Tatsuya ; Isobe, Atsuo ; Shionoiri, Yutaka ; Kato, Kiyoshi ; Koyama, Jun ; Ya
Author_Institution :
Semicond. Energy Lab. Co., Ltd., Atsugi, Japan
fYear :
2011
fDate :
22-25 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
We propose Non-Volatile Oxide Semiconductor Random Access Memory (NOSRAM) that is a novel memory including a transistor using an oxide semiconductor, In-Ga-Zn Oxide. OS transistors feature extremely low leakage current of about 100-600 yA/μm (1 yA = 10-24 A) at 85°C for example, and are applicable to memory elements. Our prototype of a 1Mb NOSRAM has achieved 1012 write cycles, no need of erasing operation, low-voltage high-speed write, and the like. The NOSRAM is not theoretically degraded by data write while a flash memory is degraded every time data are written; therefore, our NOSRAM has the possibility to be used as a non-volatile memory superior to a flash memory.
Keywords :
II-VI semiconductors; flash memories; gallium compounds; indium compounds; leakage currents; random-access storage; wide band gap semiconductors; zinc compounds; InGaZnO; NOSRAM; OS transistors; flash memory; leakage current; nonvolatile oxide semiconductor random access memory; oxide semiconductor; storage capacity 1 Mbit; transistor; Flash memory; Latches; Leakage current; Nonvolatile memory; Silicon; Transistors; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
Type :
conf
DOI :
10.1109/IMW.2011.5873242
Filename :
5873242
Link To Document :
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