Title :
The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications
Author :
Choi, Hyejung ; Yi, Jaeyun ; Hwang, Sangmin ; Lee, Sangkeum ; Song, Seokpyo ; Lee, Seunghwan ; Lee, Jaeyeon ; Son, Donghee ; Park, Jinwon ; Kim, Suk-Ju ; Kim, Ja-Yong ; Lee, Sunghoon ; Moon, Jiwon ; Kim, Choidong ; Park, Jungwoo ; Joo, Moonsig ; Roh, JaeS
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn´t show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a tunnel barrier has a benefit to reduce the switching current. In this paper, bipolar memory devices with oxides such as HfOx, ZrOx and AlOx as a tunnel barrier were fabricated with 40 ~ 80nm cell size. We showed that the switching current and inherent switching mechanism can be successfully controlled by proper tunnel barrier materials and stacks.
Keywords :
aluminium compounds; bipolar memory circuits; cellular arrays; hafnium compounds; low-power electronics; random-access storage; switching circuits; tunnelling; zirconium compounds; AlOx; HfOx; PCRAM; ReRAM; ZrOx; bipolar resistive switching memory device; diode; high density array device; low power memory application; size 40 nm to 80 nm; switching current; tunnel barrier oxide effect; Arrays; Integrated circuits; Materials; Random access memory; Resistance; Switches; Tunneling;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873243
