DocumentCode
3518967
Title
Contribution to modeling of stressing in microelectronic structures
Author
Pulec, Jiri ; Szendiuch, Ivan
Author_Institution
Dept. of Microelectron., Brno Univ. of Technol., Brno, Czech Republic
fYear
2010
fDate
12-16 May 2010
Firstpage
383
Lastpage
385
Abstract
Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.
Keywords
finite element analysis; integrated circuit modelling; FEM; data evaluation; finite element method; microelectronic structure; software ANSYS simulation; thermomechanical stress modelling; Computational modeling; Finite element methods; Materials; Microelectronics; Shape; Strain; Thermomechanical processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology (ISSE), 2010 33rd International Spring Seminar on
Conference_Location
Warsaw
Print_ISBN
978-1-4244-7849-1
Electronic_ISBN
978-1-4244-7850-7
Type
conf
DOI
10.1109/ISSE.2010.5547323
Filename
5547323
Link To Document