Title :
Contribution to modeling of stressing in microelectronic structures
Author :
Pulec, Jiri ; Szendiuch, Ivan
Author_Institution :
Dept. of Microelectron., Brno Univ. of Technol., Brno, Czech Republic
Abstract :
Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.
Keywords :
finite element analysis; integrated circuit modelling; FEM; data evaluation; finite element method; microelectronic structure; software ANSYS simulation; thermomechanical stress modelling; Computational modeling; Finite element methods; Materials; Microelectronics; Shape; Strain; Thermomechanical processes;
Conference_Titel :
Electronics Technology (ISSE), 2010 33rd International Spring Seminar on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7849-1
Electronic_ISBN :
978-1-4244-7850-7
DOI :
10.1109/ISSE.2010.5547323
