DocumentCode :
3519125
Title :
Mechanical and electrical characteristics of polysilicon film deposited by new LPCVD using lamp heating
Author :
Ueda, Tetsuo ; Kuribayashi, Katsutoshi ; Hasegawa, Satoru
Author_Institution :
Dept. of Fine-Gas Equip. Eng., Central Eng. Co. Ltd., Yamaguchi, Japan
fYear :
1999
fDate :
1999
Firstpage :
99
Lastpage :
106
Abstract :
The newly developed LPCVD apparatus using lamp heating was shown to be valid for obtaining the same polysilicon film for micromachines as that produced by the conventional LPCVD apparatus, by analysing the metallurgical properties of the polysilicon film deposited by the new LPCVD apparatus. However, when producing a micromachine using the polysilicon film deposited with this apparatus, it is necessary to know the mechanical and electrical characteristics of the film. Therefore, this report describes the analysis of Young´s modulus, resistivity and gauge factor of polysilicon deposited by the new LPCVD apparatus
Keywords :
CVD coatings; Young´s modulus; bending; chemical vapour deposition; electrical resistivity; elemental semiconductors; microsensors; semiconductor growth; semiconductor thin films; silicon; strain gauges; LPCVD; Si; Young´s modulus; bending test; electrical characteristics; electrical resistivity; gauge factor; lamp heating; mechanical characteristics; micromachine production; polysilicon film; simulation model; Electric variables; Heat engines; Impurities; Lamps; Resistance heating; Shape measurement; Substrates; Testing; Thickness measurement; Thin film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micromechatronics and Human Science, 1999. MHS '99. Proceedings of 1999 International Symposium on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-5790-6
Type :
conf
DOI :
10.1109/MHS.1999.819989
Filename :
819989
Link To Document :
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