DocumentCode :
3519258
Title :
Effect of stand-off height on the reliability of Cu/Sn-4.8Bi-2Ag/Cu solder joint
Author :
Liu, Hui ; Zhou, Longzao ; Li, Jun ; Wu, Fengshun ; Wu, Yiping
Author_Institution :
Dept. of Mater. Sci. & Eng., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2009
fDate :
10-13 Aug. 2009
Firstpage :
1094
Lastpage :
1096
Abstract :
This study investigates intermetallic compound (IMC) growing behavior at different stand-off heights (SOH) in miniature Cu/Sn-4.8Bi-2Ag/Cu solder joints. The solder joints with SOH of 10, 20, 50 and 100 mum will be studied, and the microstructures and compositions will be discussed. Meanwhile the tensile strength and the fracture mode of Sn-4.8Bi-2Ag solder joints will be also studied. The results show that Bi appears as particles spreading over the bulk of the solder joint, which will increase the strength of the solder joint. It is also found that the content of the IMC layer increases as the SOH reduces. The SOH of the solder joint plays an important role in the tensile strength. Tensile strength of the solder joint decreases as the SOH reduces, which correlates with the change of microstructures and compositions in the solder joints. The fractured path of the solder joint transfers from the bulk of the solder joint to the interface between IMC and solder, and the fracture mode tends to be brittle fracture.
Keywords :
bismuth alloys; brittle fracture; copper alloys; electronics packaging; metallisation; reliability; silver alloys; soldering; tensile strength; tin alloys; Cu-Sn-Bi-Ag-Cu; brittle fracture; intermetallic compound; size 10 mum; size 100 mum; size 20 mum; size 50 mum; solder joint reliability; stand-off height; tensile strength; Electronics packaging; Environmentally friendly manufacturing techniques; Intermetallic; Lead; Materials science and technology; Microstructure; Scanning electron microscopy; Soldering; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4658-2
Electronic_ISBN :
978-1-4244-4659-9
Type :
conf
DOI :
10.1109/ICEPT.2009.5270592
Filename :
5270592
Link To Document :
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