DocumentCode
3519274
Title
A low cost kerfless thin crystalline Si solar cell technology
Author
Rao, R.A. ; Mathew, L. ; Sarkar, D. ; Smith, S. ; Saha, S. ; Garcia, R. ; Stout, R. ; Gurmu, A. ; Ainom, M. ; Onyegam, E. ; Xu, D. ; Jawarani, D. ; Fossum, J. ; Banerjee, S. ; Das, U. ; Upadhyaya, A. ; Rohatgi, A. ; Wang, Q.
Author_Institution
AstroWatt, Austin, TX, USA
fYear
2012
fDate
3-8 June 2012
Abstract
The crystalline Si photovoltaic industry has been scaling down the Si wafer thickness in order to reduce costs and potentially attain higher efficiencies by minimizing bulk recombination. However, cell manufacturers are struggling to reduce the wafer thickness below 150μm as there are no economically viable technologies for manufacturing very thin Si wafers and such thin silicon wafers impose stringent handling requirements as wafer breakage and yield loss impact final module cost. We have previously reported a novel kerfless exfoliation technology capable of producing ultra thin 25μm thin flexible mono c-Si foils from thick Si wafers. In this work, we report on scaling the technology to 8-inch diameter wafers. A 25μm thin exfoliated monocrystalline Si solar cell with a front heterojunction emitter and a diffused back surface field structure has been fabricated with a power conversion efficiency of 14.9%. Simulations show that with optimized texturing of the foil and better surface passivation, higher efficiencies (20%) can be attained. We have also fabricated dual heterojunction devices on 25μm thin exfoliated Si, which show high Voc of 680mV. Due to the kerfless exfoliation process and wafer reuse, a final cell cost of $0.30/Wp can be achieved.
Keywords
elemental semiconductors; passivation; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; Si; Si wafer thickness; bulk recombination; cell manufacturers; crystalline Si photovoltaic industry; diffused back surface field structure; dual heterojunction devices; efficiency 14.9 percent; front heterojunction emitter; kerfless exfoliation technology; kerfless thin crystalline Si solar cell technology; size 25 mum; size 8 inch; stringent handling requirements; surface passivation; thin flexible mono c-Si foils; thin silicon wafers; wafer breakage; yield loss impact final module cost; Heterojunctions; Implants; MONOS devices; Metals; Photovoltaic cells; Silicon; Surface treatment; heterojunction; kerfless; photovoltaic cells; silicon; thin crystalline;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location
Austin, TX
ISSN
0160-8371
Print_ISBN
978-1-4673-0064-3
Type
conf
DOI
10.1109/PVSC.2012.6317951
Filename
6317951
Link To Document