DocumentCode :
3519328
Title :
Spatially resolved photoluminescence imaging of essential silicon solar cell parameters
Author :
Shen, Chao ; Kampwerth, Henner ; Green, Martin
Author_Institution :
Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2012
fDate :
3-8 June 2012
Abstract :
We present a method to image the following spatially resolved parameters of a solar cell: voltage Vxy, current density Jxy, power density Pxy, efficiency ηxy, series resistance Rs,xy, fill factor FFxy and dark saturation current densities of a two diode model J01,xy and J02,xy. The algorithm determines this set of self-consistent parameters by using a minimum of five electrical biased photoluminescence images.
Keywords :
current density; elemental semiconductors; photoluminescence; silicon; solar cells; Si; current density; dark saturation current densities; diode model; electrical biased photoluminescence images; fill factor; power density; series resistance; silicon solar cell parameters; spatially resolved parameters; spatially resolved photoluminescence imaging; Current density; Imaging; Lighting; Photovoltaic cells; Resistance; Silicon; Sun; dark saturation current; imaging; photoluminescence; solar cell; spatially resolved;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317955
Filename :
6317955
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3519328
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