• DocumentCode
    3519353
  • Title

    Damp heat versus field reliability for crystalline silicon

  • Author

    Whitfield, Kent ; Salomon, Asher ; Yang, Shuying ; Suez, Itai

  • Author_Institution
    Solaria Corp., Fremont, CA, USA
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    This paper demonstrates a multi-stress time-to-failure analysis of selected silicon PV cells due to metallic corrosion. This work indicates that the time-to-failure is a system effect and the kinetics of the reactions are different for different cells.
  • Keywords
    corrosion; elemental semiconductors; failure analysis; reaction kinetics; reliability; silicon; solar cells; Si; crystalline silicon; damp heat; field reliability; metallic corrosion; multistress time-to-failure analysis; reaction kinetics; selected silicon PV cells; DH-HEMTs; Heating; Indexes; Acceleration models; damp heat; degradation modeling; reliability; service lifetime prediction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317957
  • Filename
    6317957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3519353