• DocumentCode
    3519396
  • Title

    Monolithic Integration of GaAs/AlGaAs Phase Modulator and Photodetector for RF Photonics

  • Author

    Jarrahi, Mona ; Miller, David A. B. ; Lee, Tong H.

  • Author_Institution
    SMIRCLab, Stanford Univ., Stanford, CA, USA
  • fYear
    2008
  • fDate
    24-28 Feb. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report the design and monolithic fabrication of phase modulator and photodetectors for RF photonics. We demonstrate phase modulation efficiency of 270°V-1mm-1, and a bandwidth of 18 GHz. Photodetectors response time is measured to be 8ps.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; optical modulation; phase modulation; photodetectors; GaAs-AlGaAs; RF photonics; bandwidth 18 GHz; monolithic integration; phase modulation efficiency; phase modulator; photodetectors; response time; time 8 ps; Bandwidth; Delay; Fabrication; Gallium arsenide; Monolithic integrated circuits; Phase modulation; Photodetectors; Photonics; Radio frequency; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-55752-856-8
  • Type

    conf

  • DOI
    10.1109/OFC.2008.4528065
  • Filename
    4528065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3519396