Title :
Large-area Top-Illuminated InP-Passivated Mesa-type InGaAs pin Photodiodes for High-bit-rate Multi-mode Fiber Applications
Author :
Yoneda, Yoshihiro ; Yamabi, Ryuji ; Sawada, Syo ; Yano, Hiroyuki
Author_Institution :
Eudyna Device Inc., Yokohama, Japan
Abstract :
We demonstrate top-illuminated InGaAs pin photodiodes with both a large area (φ56 μm) and low capacitance (212 fF) for 10 Gb/s MMF applications. The devices exhibit high- responsivity (0.88 A/W) and broad bandwidth (8.8 GHz).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fibres; p-i-n diodes; photodiodes; InGaAs; InP; bandwidth 8.8 GHz; bit rate 10 Gbit/s; capacitance 212 fF; multi mode fiber; pin photodiodes; size 56 mum; Bandwidth; Capacitance-voltage characteristics; Costs; Indium gallium arsenide; Indium phosphide; Optical fiber devices; PIN photodiodes; Parasitic capacitance; Passivation; Voltage;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528066
