Title :
Small–signal and noise parameters of heterotransistor with quantum dots
Author :
Timofeyev, Vladimir I. ; Faleyeva, Elena M.
Author_Institution :
Nat. Tech. Univ. of Ukraine KPI, Kiev, Ukraine
Abstract :
In this work small-signal and noise parameters for heterotransistor with quantum dots were presented. These parameters were extracted from electrons´ velocity and concentration distributions from two-dimensional physical-topological modeling. Noise parameters were found from average values for electron temperature for corresponding areas. Also, results for double-channel heterotransistor with quantum dots were presented. It was shown that embedding quantum dots even into the one of two channels leads to power gain increasing.
Keywords :
high electron mobility transistors; noise; quantum dots; HEMT; double-channel heterotransistor; electron temperature; electrons velocity; high electron mobility transistors; noise parameters; power gain; quantum dots embedding; small-signal parameters; two-dimensional physical-topological modeling; HEMTs; Integrated circuit modeling; MODFETs; Noise; Quantum dots; Springs;
Conference_Titel :
Electronics Technology (ISSE), 2010 33rd International Spring Seminar on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7849-1
Electronic_ISBN :
978-1-4244-7850-7
DOI :
10.1109/ISSE.2010.5547357
