Small–signal and noise parameters of heterotransistor with quantum dots

In this work small-signal and noise parameters for heterotransistor with quantum dots were presented. These parameters were extracted from electrons´ velocity and concentration distributions from two-dimensional physical-topological modeling. Noise parameters were found from average values for electron temperature for corresponding areas. Also, results for double-channel heterotransistor with quantum dots were presented. It was shown that embedding quantum dots even into the one of two channels leads to power gain increasing.