Analysis of geometrical structure and transport property in InAs/Si heterojunction nanowire tunneling field effect transistors

Band-to-band tunneling (BTBT) field-effect transistors (FETs) is one of the promising strategies in reducing the leakage current and improving the subthreshold characteristics compared with the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). However, BTBT-FETs have an intrinsic drawback of small on-current. We explore numerically the possibility of using the InAs/Si heterojunction nanowire (NW) to resolve such intrinsic difficulty in BTBT-FETs, and found that the use of the InAs/Si heterojunction nanowire is advantageous in increasing the on-current compared with the Si homojunction nanowires.