DocumentCode :
3519524
Title :
Simulation of plasma immersion ion implantation
Author :
Burenkov, A. ; Pichler, P. ; Lorenz, J. ; Spiegel, Y. ; Duchaine, J. ; Torregrosa, F.
Author_Institution :
IISB, Fraunhofer Inst. for Integrated Syst. & Device Technol., Erlangen, Germany
fYear :
2011
fDate :
8-10 Sept. 2011
Firstpage :
231
Lastpage :
234
Abstract :
Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1015 to 1017 cm-2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.
Keywords :
Monte Carlo methods; boron compounds; plasma collision processes; plasma immersion ion implantation; plasma simulation; secondary ion mass spectra; BF3; Monte-Carlo based binary-collision approach; SIMS; double-exponential energetic spectrum; numerical simulation; plasma immersion ion implantation; pulsed voltage ion extraction; Boron; Doping; Energy measurement; Ion beams; Ion implantation; Plasmas; Silicon; Ion implantation; Plasma immersion; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
ISSN :
1946-1569
Print_ISBN :
978-1-61284-419-0
Type :
conf
DOI :
10.1109/SISPAD.2011.6034962
Filename :
6034962
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3519524
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