Title :
Improvement of XPM efficiency in InGaAs/AlAsSb coupled quantum wells using InAlAs coupling barrier for intersubband transition optical switch
Author :
Nagase, Masanori ; Akimoto, Ryoichi ; Simoyama, Takasi ; Mozume, Teruo ; Hasama, Toshifumi ; Ishikawa, Hiroshi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
The InGaAs/InAlAs/AlAsSb coupled quantum well is developed to use in Mach-Zehnder interferometric switch utilizing intersubband transition. Strong well-well coupling produced by this structure enhances cross phase modulation, which is effective in reducing the switching energy.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; arsenic compounds; gallium arsenide; indium compounds; optical couplers; optical modulation; optical switches; phase modulation; semiconductor quantum wells; semiconductor switches; InAlAs coupling barrier; InGaAs-InAlAs-AlAsSb; InGaAs/AlAsSb coupled quantum well; Mach-Zehnder interferometric switch; XPM efficiency; cross phase modulation; intersubband transition optical switch; Absorption; Effective mass; Indium compounds; Indium gallium arsenide; Optical coupling; Optical interferometry; Optical switches; Phase modulation; Refractive index; Waveguide transitions;
Conference_Titel :
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-55752-856-8
DOI :
10.1109/OFC.2008.4528072
