Title :
Inverse modeling of sub-100nm MOSFET with PDE-constrained optimization
Author :
Shen, Chen ; Gong, Ding
Author_Institution :
Cogenda Pte Ltd., Singapore, Singapore
Abstract :
The inverse modeling of MOSFET aims to extract the process and device parameters of a CMOS technology from electrical test data, such as the I-V curves. In this work, an inverse modeling approach that efficiently calculates the partial derivatives is outlined, and extraction result on a 65 nm CMOS technology is presented. In particular, instead of fitting to I-V curves of one transistor, this work attempts to fit to all device sizes, from the shortest gate length to the long-channel ones.
Keywords :
MOSFET; optimisation; partial differential equations; CMOS technology; I-V curve; MOSFET inverse modelling; PDE-constrained optimization; electrical test data; shortest gate length; size 100 nm; size 65 nm; CMOS integrated circuits; Doping; Semiconductor device modeling; Transistors;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on
Conference_Location :
Osaka
Print_ISBN :
978-1-61284-419-0
DOI :
10.1109/SISPAD.2011.6034965
