Numerical study of GaAs-based dual junction intermediate band solar cells

Author

Ching-Yu Shih ; Ming-Hsuan Tan ; Lung-Hsing Hsu ; Che-Pin Tsai ; Cheng-Chung Lin ; Hao-Chung Kuo ; Chuang, K.Y. ; Lay, T.S.

Author_Institution

Inst. of Photonic Syst., Nat. Chiao Tung Univ., Tainan, Taiwan

fYear

2012

fDate

3-8 June 2012

Abstract

A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically. We built our device model by using Matlab^® coding and commercial software Silvaco^®. A proper inclusion of quantum-dot-related carrier absorption is adapted through modified extinction coefficient k, and effective band gap of the device. The final calculation shows the optimal efficiency enhancement is about 1.11 times of the non-quantum-dot embedded device. This design has great potential to realize a triple junction result with a dual-junction photovoltaic device.

Keywords

energy gap; gallium arsenide; numerical analysis; quantum dots; solar cells; GaAs; Matlab coding; commercial software Silvaco; dual junction intermediate band solar cell; dual-junction photovoltaic device; effective band gap; modified extinction coefficient k; nonquantum-dot embedded device; numerical study; optimal efficiency enhancement; quantum dot intermediate band solar cell; quantum-dot-related carrier absorption; triple junction; Absorption; Gallium arsenide; Junctions; MATLAB; Mathematical model; Photovoltaic cells; Quantum dots; dual-junction solar cell; photovoltaic cells; quantum-dot solar cells; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317968

Filename

6317968