Numerical study of GaAs-based dual junction intermediate band solar cells

A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically. We built our device model by using Matlab^® coding and commercial software Silvaco^®. A proper inclusion of quantum-dot-related carrier absorption is adapted through modified extinction coefficient k, and effective band gap of the device. The final calculation shows the optimal efficiency enhancement is about 1.11 times of the non-quantum-dot embedded device. This design has great potential to realize a triple junction result with a dual-junction photovoltaic device.