• DocumentCode
    3519763
  • Title

    Photovoltaic measurements in carbon nanotube - amorphous silicon core/shell nanowire

  • Author

    Zhou, Hang ; Lentaris, Georgis ; Hiralal, Pritesh ; Butler, Tim ; Unalan, Emrah ; Amaratunga, Gehan ; Colli, Alan

  • Author_Institution
    Sch. of Inf. Eng., Peking Univ., Shenzhen, China
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of ~104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ~0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors.
  • Keywords
    Schottky diodes; amorphous semiconductors; carbon nanotubes; elemental semiconductors; indium compounds; nanotube devices; nanowires; photodetectors; rectification; silicon; solar cells; sputter deposition; tin compounds; MWNT; Schottky junction; Si-ITO; amorphous silicon core-shell nanowire photovoltaic device; collection properties; intrinsic amorphous silicon layers; metallic core; multiwalled carbon nanotube; nanowire charge transport; nanowire solar cells; open circuit voltage; photodetectors; photon detection; photovoltaic measurements; rectification ratio; single coaxial nanowire device; solar energy conversion; transparent conducting indium-tin-oxide layer sputtering; turn-on voltage; voltage -2 V to 2 V; Amorphous silicon; Carbon nanotubes; Nanoscale devices; Photovoltaic cells; Photovoltaic systems; Carbon Nanotube; Core/Shell Structure; Nanowire; Photodiode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317976
  • Filename
    6317976