A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells

Numerical simulation of a-Si/c-Si_1-xGe_x/c-Si hetrostructure was performed. Advanced modeling and simulation tools were used for this study. It was found that p-Si_1-xGe_x film can play a critical role to improve the light absorption properties of the design structure. Study was performed for varying thickness of Si_1-xGe_x alloyed layer, where, Ge composition was kept constant ~10% throughout. An approach relying on the phenomena of improved absorption properties that corresponds to the gain in the short-circuit current was explored. Numerical results showed that for p-Si_1-xGe_x thickness ~5°m, n⁺ and p⁺ doping concentrations ~2×10¹⁹ cm^-3 and ~2×10¹⁸ cm^-3, an efficiency ~19.07% was obtained.