Title :
High-uniform and high-temperature-operation 12-element 1.5-/spl mu/m AlGaInAs/InP laser arrays
Author :
Chia-Chien Lin ; Tien-Tsorng Shih ; Hung-Pin Shiao ; Wei-Han Wang ; Hung-Huei Liao ; Wei Lin
Author_Institution :
Integrated Optoelectron., Chunghwa Telecom Co. Ltd., Taiwan, China
Abstract :
Summary form only given. We adopted the strain compensated AlGaInAs quantum wells to fabricate laser arrays, which show high-uniform and high-temperature operational characteristics. We reported the highly uniform, low threshold current and high temperature operation of 1.5-/spl mu/m AlGaInAs-InP laser arrays.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor laser arrays; 1.5 mum; 12-element; AlGaInAs; AlGaInAs QW lasers; AlGaInAs-InP laser arrays; AlGaInAs/InP laser arrays; InP; high temperature operation; high-temperature operational characteristics; high-temperature-operation; high-uniform; highly uniform; low threshold current; strain compensated AlGaInAs quantum wells; Fiber lasers; Laboratories; Optical arrays; Optical fibers; Power lasers; Quantum well lasers; Telecommunication buffers; Temperature dependence; Tensile strain; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675964
