• DocumentCode
    3519838
  • Title

    Development of zinc phosphide as a p-type absorber

  • Author

    Vasekar, Parag ; Adusumilli, Siva P. ; VanHart, Daniel ; Dhakal, Tara ; Desu, Seshu

  • Author_Institution
    Center for Autonomous Solar Power, State Univ. of New York at Binghamton, Binghamton, NY, USA
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    In the present contribution, we report a simple and repeatable process for the synthesis of zinc phosphide on two different substrates, zinc foil and zinc evaporated on molybdenum-coated glass. Zinc phosphide has been an important candidate for optoelectronic applications and has also been explored in the lithium ion batteries. Zinc phosphide is synthesized from earth-abundant constituents, zinc and phosphorous. Trioctylphosphine (TOP) is used as a source of phosphorous which reacts with zinc and results in the growth of zinc phosphide. Zinc phosphide has been successfully synthesized in both continuous thin film and nanowires form around ~ 350°C. The synthesized zinc phosphide phase was characterized using SEM, EDS, XRD and XPS. Possible growth mechanism is discussed.
  • Keywords
    nanowires; secondary cells; semiconductor thin films; vacuum deposition; zinc compounds; EDS; SEM; XPS; XRD; Zn3P2; continuous thin film; earth-abundant constituents; growth mechanism; lithium ion batteries; molybdenum-coated glass; nanowires; optoelectronic applications; p-type absorber; trioctylphosphine; zinc foil; zinc phosphide; Films; Glass; Nanowires; Photovoltaic cells; X-ray scattering; Zinc; earth-abundant; photovoltaic; trioctylphosphine; zinc phosphide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317980
  • Filename
    6317980