Title :
Two-stage chemical bath deposition for well-covered and stoichiometric ZnS thin films
Author :
Po-Chuan Tsai ; Ian Pai ; Shieh, H.D.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A two-stage chemical bath deposition (CBD) was reported to modify the thin film deposition of zinc sulfide (ZnS) material, which is a promising candidate as a buffer layer in chalcopyrite solar cells. During the proposed process, two bath temperatures were used subsequently: substrates were immersed in the bath with temperature 85°C for first-stage deposition, followed by the bath with temperature 70°C for the second-stage deposition. As a result, the ZnS film deposited by the proposed two-stage CBD process demonstrated the more desirable film coverage and stoichiometric Zn/S ratio on the soda lime glass substrate than the one without.
Keywords :
II-VI semiconductors; buffer layers; chemical vapour deposition; semiconductor thin films; solar cells; stoichiometry; thin film devices; zinc compounds; ZnS; buffer layer; chalcopyrite solar cells; second-stage deposition; soda lime glass substrate; stoichiometric ratio; stoichiometric thin films; temperature 85 degC; thin film deposition; two-stage CBD process; two-stage chemical bath deposition; zinc sulfide material; Atomic layer deposition; Buffer layers; Chemicals; Substrates; Surface treatment; Zinc; XPS spectrum; chemical bath deposition; two-satge; zinc sulfide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317987