• DocumentCode
    3519952
  • Title

    Two-stage chemical bath deposition for well-covered and stoichiometric ZnS thin films

  • Author

    Po-Chuan Tsai ; Ian Pai ; Shieh, H.D.

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    A two-stage chemical bath deposition (CBD) was reported to modify the thin film deposition of zinc sulfide (ZnS) material, which is a promising candidate as a buffer layer in chalcopyrite solar cells. During the proposed process, two bath temperatures were used subsequently: substrates were immersed in the bath with temperature 85°C for first-stage deposition, followed by the bath with temperature 70°C for the second-stage deposition. As a result, the ZnS film deposited by the proposed two-stage CBD process demonstrated the more desirable film coverage and stoichiometric Zn/S ratio on the soda lime glass substrate than the one without.
  • Keywords
    II-VI semiconductors; buffer layers; chemical vapour deposition; semiconductor thin films; solar cells; stoichiometry; thin film devices; zinc compounds; ZnS; buffer layer; chalcopyrite solar cells; second-stage deposition; soda lime glass substrate; stoichiometric ratio; stoichiometric thin films; temperature 85 degC; thin film deposition; two-stage CBD process; two-stage chemical bath deposition; zinc sulfide material; Atomic layer deposition; Buffer layers; Chemicals; Substrates; Surface treatment; Zinc; XPS spectrum; chemical bath deposition; two-satge; zinc sulfide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317987
  • Filename
    6317987