DocumentCode :
3520039
Title :
High yield 1.6 /spl mu/m region compressively strained MQW-BH laser diodes by all MOVPE Drocess
Author :
Akiyama, M. ; Sekiguchi, T. ; Ravikumar, K.G. ; Suzaki, S. ; Yamauchi, R. ; Inada, K.
fYear :
1995
fDate :
10-14 July 1995
Firstpage :
152
Keywords :
Diode lasers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical buffering; Power generation; Quantum well devices; Shape; Space vector pulse width modulation; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-2400-5
Type :
conf
DOI :
10.1109/CLEOPR.1995.527063
Filename :
527063
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3520039
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