DocumentCode
3520039
Title
High yield 1.6 /spl mu/m region compressively strained MQW-BH laser diodes by all MOVPE Drocess
Author
Akiyama, M. ; Sekiguchi, T. ; Ravikumar, K.G. ; Suzaki, S. ; Yamauchi, R. ; Inada, K.
fYear
1995
fDate
10-14 July 1995
Firstpage
152
Keywords
Diode lasers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical buffering; Power generation; Quantum well devices; Shape; Space vector pulse width modulation; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-2400-5
Type
conf
DOI
10.1109/CLEOPR.1995.527063
Filename
527063
Link To Document