DocumentCode :
3520218
Title :
Numerical modeling of InxGa1−xn silicon multi-junction tandem solar cell
Author :
Hsieh, Ming-Han ; Wu, Yuh-Renn
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2012
fDate :
3-8 June 2012
Abstract :
This paper discusses the performance of the silicon based InxGa1-xN multi-junction tandem solar cells. For the double-junction tandem solar cell, the optimized condition of In composition and layer thickness of crystalline Si for the highest efficiency are studied. A In0.40Ga0.60N p-n junction layer with 0.5 μm layer thickness provides the highest efficiency from our simulation. For the triple-junction tandem solar cell, we find that a In38Ga62N/ In56Ga44N/ silicon with 0.75 μm, 0.75 μm, and 10.0 μm Si layer thickness could reach 39.50 % efficiency.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; p-n junctions; silicon; solar cells; wide band gap semiconductors; InGaN; double junction tandem solar cell; layer thickness; numerical modeling; p-n junction layer; silicon multijunction tandem solar cell; size 0.5 mum; triple junction tandem solar cell; Message systems; Silicon; InGaN; Tandem solar cells; multi-junction solar cell; silicon; tunneling layer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6318002
Filename :
6318002
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3520218
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