DocumentCode
3520226
Title
Parameter design of solder die bonding based on DOE
Author
Hu, Jun ; Xie, Xinpeng
Author_Institution
Guangdong Yuejing High-Tech Co, Ltd., Guangzhou, China
fYear
2009
fDate
10-13 Aug. 2009
Firstpage
799
Lastpage
801
Abstract
In this paper, DOE methodology was used to set parameters that may exert an influence on voids in the solder layer of MOSFET´s products. Parameters of temperature and delay-times were set. With different parameters, voids rate in solder layer changes. Finally we can find the main factor affecting voids rate, thus to reduce the voids rate in solder layer and get high-powered semiconductor device.
Keywords
design of experiments; microassembling; power MOSFET; solders; DOE methodology; MOSFET products; bonding parameter design; design of experiments; high-powered semiconductor device; solder die bonding; solder layer; Delay effects; Impedance; Inorganic materials; Joining materials; Microassembly; Semiconductor devices; Semiconductor materials; Soldering; Thermal stresses; US Department of Energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-4658-2
Electronic_ISBN
978-1-4244-4659-9
Type
conf
DOI
10.1109/ICEPT.2009.5270640
Filename
5270640
Link To Document