• DocumentCode
    3520312
  • Title

    Web use and the RIT silicon processes course: triple implanted BJT process laboratory

  • Author

    Pearson, Robert

  • Author_Institution
    Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
  • fYear
    1997
  • fDate
    20-23 Jul 1997
  • Firstpage
    22
  • Lastpage
    25
  • Abstract
    A senior or graduate level advanced course covering diffusion, oxidation and ion implantation is intimately coupled to a laboratory fabrication project which uses a triple implanted BJT process. Example process simulations which reinforce lecture material are provided by way of the class Web site. Students simulate the entire process flow, including experimental design splits and collect process data on the Web for comparison and analysis. Pages on ion implantation are used to prepare students for use of the actual equipment. Animated Web applets are used to review some of the basic device physics before electrical testing begins. The electrical test programs, sample test data and setup information are also available through the Web. This paper describes RIT´s implementation of these features in course work in microelectronics
  • Keywords
    Internet; bipolar integrated circuits; computer aided instruction; diffusion; digital simulation; educational courses; electronic engineering computing; electronic engineering education; elemental semiconductors; integrated circuit design; integrated circuit manufacture; integrated circuit testing; ion implantation; oxidation; semiconductor process modelling; silicon; student experiments; Si; Si processes course; Web use; animated Web applets; class Web site; diffusion; electrical test programs; example process simulations; graduate level advanced course; ion implantation; laboratory fabrication project; microelectronics course; oxidation; process data collection; process flow simulation; sample test data; senior level advanced course; setup information; triple implanted BJT process laboratory; Analytical models; Animation; Design for experiments; Fabrication; Ion implantation; Laboratories; Oxidation; Physics; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
  • Conference_Location
    Rochester, NY
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-3790-5
  • Type

    conf

  • DOI
    10.1109/UGIM.1997.616673
  • Filename
    616673